M27C160
Table 10. Programming Mode DC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.5V ± 0.25V)
Symbol
I
LI
I
CC
I
PP
V
IL
V
IH
V
OL
V
OH
V
ID
Parameter
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
I
OL
= 2.1mA
I
OH
= –2.5mA
3.5
11.5
12.5
E = V
IL
–0.3
2.4
Test Condition
0
≤
V
IN
≤
V
CC
Min
Max
±1
50
50
0.8
V
CC
+ 0.5
0.4
Unit
µA
mA
mA
V
V
V
V
V
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 11. Programming Mode AC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.5V ± 0.25V)
Symbol
t
AVEL
t
QVEL
t
VPHAV
t
VCHAV
t
ELEH
t
EHQX
t
QXGL
t
GLQV
t
GHQZ (2)
t
GHAX
Alt
t
AS
t
DS
t
VPS
t
VCS
t
PW
t
DH
t
OES
t
OE
t
DFP
t
AH
Parameter
Address Valid to Chip Enable Low
Input Valid to Chip Enable Low
V
PP
High to Address Valid
V
CC
High to Address Valid
Chip Enable Program Pulse Width
Chip Enable High to Input Transition
Input Transition to Output Enable Low
Output Enable Low to Output Valid
Output Enable High to Output Hi-Z
Output Enable High to Address
Transition
0
0
Test Condition
Min
2
2
2
2
45
2
2
120
130
55
Max
Unit
µs
µs
µs
µs
µs
µs
µs
ns
ns
ns
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27C160 are in the '1'
state. Data is introduced by selectively program-
ming '0's into the desired bit locations. Although
only '0's will be programmed, both '1's and '0's can
be present in the data word. The only way to
change a '0' to a '1' is by die exposure to ultraviolet
light (UV EPROM). The M27C160 is in the pro-
gramming mode when V
PP
input is at 12.5V, G is
at V
IH
and E is pulsed to V
IL
. The data to be pro-
grammed is applied to 16 bits in parallel to the data
output pins. The levels required for the address
and data inputs are TTL. V
CC
is specified to be
6.25V ± 0.25V.
9/19
STMICROELECTRONICS [ STMICROELECTRONICS ]
