M29W200BT
M29W200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
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SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
1
44
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PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
TSOP48 (N)
12 x 20mm
SO44 (M)
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ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
Figure 1. Logic Diagram
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UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
17
A0-A16
W
E
G
RP
M29W200BT
M29W200BB
15
DQ0-DQ14
DQ15A–1
BYTE
RB
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VCC
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100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W200BT: 0051h
– Bottom Device Code: M29W200BB 0057h
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ECOPACK
®
PACKAGES AVAILABLE
VSS
AI02948
September 2005
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