®
MJD2955
MJD3055
COMPLEMENTARY SILICON POWER TRANSISTORS
s
s
s
STM PREFERRED SALESTYPES
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
ELECTRICAL SIMILAR TO MJE2955 AND
MJE3055
APPLICATIONS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER TRANSISTORS
DESCRIPTION
The
MJD2955
and
MJD3055
form
complementary PNP-NPN pairs. They are
manufactured using Epitaxial Base technology for
cost-effective performance.
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
B
P
t ot
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Dissipation at T
c
= 25 C
o
Value
MJD3055
MJD2955
60
70
5
10
6
20
Uni t
V
V
V
A
A
W
June 1998
1/6
STMICROELECTRONICS [ STMICROELECTRONICS ]
