®
MJE802
SILICON NPN POWER DARLINGTON TRANSISTOR
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN DARLINGTON
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
DESCRIPTION
The MJE802 is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration,
mounted in Jedec SOT-32 plastic package. It is
intended for use in medium power linear and
switching applications.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Base-Emitter Voltage (I
C
= 0)
Collector Current
Base Current
Total Power Dissipation at T
case
≤
25
o
C
Storage Temperature
Max Operating Junction Temperature
Value
80
80
5
4
0.1
40
-65 to 150
150
Unit
V
V
V
A
A
W
o
o
C
C
September 2003
1/4
STMICROELECTRONICS [ STMICROELECTRONICS ]
