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PD55008L-E 参数 Datasheet PDF下载

PD55008L-E图片预览
型号: PD55008L-E
PDF下载: 下载PDF文件 查看货源
内容描述: RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET [RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs]
分类和应用: 晶体晶体管
文件页数/大小: 15 页 / 199 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
PD55008L-E  
2
Electrical characteristics  
o
(T  
= +25 C)  
CASE  
2.1  
Static  
Table 3.  
Symbol  
Static  
Test conditions  
Min. Typ. Max. Unit  
IDSS  
IGSS  
VGS = 0 V VDS = 28 V  
VGS = 5V VDS = 0 V  
VDS = 10 V ID = 150 mA  
1
1
µA  
µA  
V
VGS(Q)  
2.0  
5.0  
0.14  
VDS(ON) VGS = 10 V ID = 0.5 A  
0.13  
1.6  
53  
V
GFS  
CISS  
VDS = 10 V ID = 1.5 A  
mho  
pF  
pF  
pF  
VGS = 0 V VDS = 12.5 V f = 1 MHz  
VGS = 0 V VDS = 12.5 V f = 1 MHz  
VGS = 0 V VDS = 12.5 V f = 1 MHz  
COSS  
CRSS  
38  
3.2  
2.2  
Dynamic  
Table 4.  
Symbol  
Dynamic  
Test conditions  
VDD = 12.5V, IDQ = 150mA  
Min. Typ. Max. Unit  
POUT  
GP  
f = 500MHz  
8
W
dB  
%
VDD = 12.5V, IDQ = 150mA, POUT = 8W, f = 500MHz  
VDD = 12.5V, IDQ = 150mA, POUT = 8W, f = 500MHz  
VDD = 15.5V, IDQ = 150mA, POUT = 8W, f = 500MHz  
17  
55  
19  
63  
hD  
Load  
20:1  
VSWR  
mismatch All phase angles  
2.3  
Esd protection characteristics  
Table 5.  
Esd protection  
Test conditions  
Class  
Human Body Model  
Machine Model  
2
M3  
2.4  
Moisture sensitivity level  
Table 6.  
Moisture sensitivity level  
Test methodology  
Rating  
J-STD-020B  
MSL 3  
4/15