SD1542-04
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.
.
.
.
.
.
.
DESIGNED FOR HIGH POWER PULSED
IFF
600 WATTS (min.) IFF 1030/1090 MHz
REFRACTORY GOLD METALLIZATION
6.0 dB MIN. GAIN
BALLASTING AND LOW THERMAL
REISTANCE FOR RELIABILITY AND
RUGGEDNESS
30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
INPUT MATCHED, COMMON BASE
CONFIGURATION
.400 x .500 2LFL (M112)
hermetically sealed
ORDER CODE
SD1542-04
BRANDING
SD1542-4
PIN CONNECTION
DESCRIPTION
The SD1542-04 is a hermetically sealed, gold me-
tallized, silicon NPN power transistor. The SD1542-
04 is designed for applications requiring high peak
power and low duty cycles such as IFF. The
SD1542-04 is packaged in a hermetic metal/ce-
ramic package with internal input matching, re-
sulting in improved broadband performance and
low thermal reistance.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
65
65
3.5
40
1350
+200
−
65 to +150
V
V
V
A
W
°
C
°
C
THERMAL DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance
0.06
°C/W
1/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
