SD2931-10
RF power transistor:
HF/VHF/UHF N-channel power MOSFETs
Datasheet — production data
Features
■
■
■
■
■
Gold metallization
Excellent thermal stability
Common source configuration
P
OUT
= 150 W min. with 14 dB gain @ 175 MHz
Thermally enhanced packaging for lower
junction temperatures
Description
The SD2931-10 is a gold metallized N-channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50 V dc large
signal applications up to 230 MHz.
The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25 % lower thermal resistance),
representing the best-in-class transistors for ISM
applications, where reliability and ruggedness are
critical factors.
M174
Epoxy sealed
Figure 1.
Pin connection
4
1
3
1. Drain
2. Source
2
3. Gate
4. Source
Table 1.
Device summary
Marking
SD2931-10
Base qty.
25 pcs
Package
M174
Packaging
(1)
Plastic tray
Order code
SD2931-10W
1. For more details please refer to
December 2012
This is information on a product in full production.
Doc ID 7076 Rev 9
1/19
19
STMICROELECTRONICS [ STMICROELECTRONICS ]
