®
SD2932
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
PRELIMINARY DATA
�½
�½
�½
�½
GOLD METALLIZATION
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION,
PUSH-PULL
POUT = 300W MIN. WITH 15 dB GAIN @175
MHz
DESCRIPTION
The SD2932 is a gold metallized N-Channel MOS
field-effect RF power transistor. The SD2932 is
intended for use in 50V dc large signal
applications up to 250 MHz
M244
epoxy sealed
ORDER CODE
BRANDING
SD2932
TSD2932
PIN CONNECTION
1. Drain
2. Gate
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DI SS
T
j
T
STG
Parameter
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1MΩ)
Gate-Source Voltage
Drain Current
Power Dissipation
Max. O perating Junction Temperature
Storage Temperature
Value
125
125
±20
40
500
+200
-65 to 150
3. Source
Uni t
V
V
V
A
W
o
o
C
C
THERMAL DATA
R
th (j-c)
R
th(c -s)
Junction-Case Thermal Resistance
Case Heatsink Thermal Resistance
∗
0.35
0.12
o
o
C/W
C/W
∗
Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
March 2000
1/13
STMICROELECTRONICS [ STMICROELECTRONICS ]
