Characteristics
SM15TY
Figure 3.
Peak pulse power dissipation
versus initial junction temperature
(typical values)
10/1000 µs
Figure 4.
Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
2000
P
PP
(W)
100.0
P
PP
(kW)
1500
10.0
1000
1.0
500
0
0
25
50
75
100
125
150
T
j
(°C)
175
0.1
1.0E-03
tp (ms)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
Figure 5.
Clamping voltage versus peak
pulse current (exponential
waveform, maximum values)
Figure 6.
Junction capacitance versus
reverse applied voltage for
unidirectional types (typical values)
1000.0
I
PP
(A)
T
j initial
= 25 °C
10000
C(pF)
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
SM15T6V8AY
100.0
8/20 µs
10/1000 µs
10.0
SM15T6V8AY/CAY
SM15T82AY/CAY
SM15T30AY/CAY
1000
SM15T30AY
1.0
SM15T82AY
0.1
1
V
CL
(V)
100
1000
100
1
10
100
V
R
(V)
1000
10
Figure 7.
Junction capacitance versus
reverse applied voltage for
bidirectional types (typical values)
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under each lead
10000
C(pF)
SM15T6V8CAY
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
100
90
80
70
60
R
th(j-a)
(°C/W)
Printed circuit board FR4,
copper thickness = 35 µm
1000
SM15T30CAY
50
40
SM15T82CAY
30
20
10
100
1
10
100
V
R
(V)
1000
0
0.0
S
Cu
(cm²)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
4/12
Doc ID 17865 Rev 3
STMICROELECTRONICS [ STMICROELECTRONICS ]
