N-CHANNEL 100V - 0.115
Ω
- 13A IPAK/DPAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
STD10NF10
s
s
s
STD10NF10
V
DSS
100 V
R
DS(on)
<0.13
Ω
I
D
13 A
s
s
TYPICAL R
DS
(on) = 0.115Ω
EXCEPTIONAL dv/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
3
2
1
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
3
1
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
100
100
± 20
13
9
52
50
0.33
9
70
-55 to 175
(1) I
SD
≤13A,
di/dt
≤300A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 15A, V
DD
= 50V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(•)
Pulse width limited by safe operating area.
June 2002
.
1/10
STMICROELECTRONICS [ STMICROELECTRONICS ]
