STK12N05L
STK12N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE
STK12N05L
STK12N06L
s
s
s
s
s
s
s
V
DSS
50 V
60 V
R
DS( on)
< 0.15
Ω
< 0.15
Ω
I
D
12 A
12 A
s
TYPICAL R
DS(on)
= 0.115
Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
LOGIC LEVEL COMPATIBLE INPUT
175
o
C OPERATING TEMPERATURE FOR
STANDARD PACKAGE
APPLICATION ORIENTED
CHARACTERIZATION
1
2
3
1
2
3
SOT-82
SOT-194
(option)
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STK12N05L
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(•)
P
tot
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
o
Value
STK12N06L
60
60
±
15
12
8
48
50
0.33
-65 to 175
175
Unit
50
50
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(•) Pulse width limited by safe operating area
November 1996
1/10
STMICROELECTRONICS [ STMICROELECTRONICS ]
