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STM8S105C4B3 参数 Datasheet PDF下载

STM8S105C4B3图片预览
型号: STM8S105C4B3
PDF下载: 下载PDF文件 查看货源
内容描述: 接入线路, 16兆赫STM8S 8位MCU ,最多32 KB闪存,集成的EEPROM , 10位ADC ,定时器, UART , SPI , I²C [Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 127 页 / 1323 K
品牌: STMICROELECTRONICS [ ST ]
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STM8S105xx  
Electrical characteristics  
Symbol Parameter  
Conditions  
Typ  
Max(1) Unit  
fADC = 4 MHz  
0.7  
1
|EL|  
Integral linearity error(2)  
fADC = 2 MHz  
fADC = 4 MHz  
0.6  
0.6  
1.5  
1.5  
(1) Data based on characterisation results for LQFP80 device with VREF+/VREF-, not tested  
in production.  
(2) ADC accuracy vs. negative injection current: Injecting negative current on any of the  
analog input pins should be avoided as this significantly reduces the accuracy of the  
conversion being performed on another analog input. It is recommended to add a Schottky  
diode (pin to ground) to standard analog pins which may potentially inject negative current.  
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in I/O port  
pin characteristics does not affect the ADC accuracy.  
Figure 45: ADC accuracy characteristics  
1. Example of an actual transfer curve.  
2. The ideal transfer curve  
3. End point correlation line  
ET = Total unadjusted error: maximum deviation between the actual and the ideal transfer  
curves.  
EO = Offset error: deviation between the first actual transition and the first ideal one.  
EG = Gain error: deviation between the last ideal transition and the last actual one.  
ED = Differential linearity error: maximum deviation between actual steps and the ideal  
one.  
DocID14771 Rev 9  
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