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STM8S105C4B3 参数 Datasheet PDF下载

STM8S105C4B3图片预览
型号: STM8S105C4B3
PDF下载: 下载PDF文件 查看货源
内容描述: 接入线路, 16兆赫STM8S 8位MCU ,最多32 KB闪存,集成的EEPROM , 10位ADC ,定时器, UART , SPI , I²C [Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 127 页 / 1323 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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Electrical characteristics
Figure 42: SPI timing diagram - slave mode and CPHA = 1
STM8S105xx
(1)
NSS input
tSU(NSS)
SCK Input
CPHA=1
CPOL=0
CPHA=1
CPOL=1
tc(SCK)
th(NSS)
tw(SCKH)
tw(SCKL)
tr(SCK)
tf(SCK)
ta(SO)
MISO
OUT P UT
tsu(SI)
MOSI
I NPUT
M SB IN
tv(SO)
MS B O UT
th(SI)
th(SO)
BI T6 OUT
tdis(SO)
LSB OUT
B I T1 IN
LSB IN
ai14135
1.
Measurement points are made at CMOS levels: 0.3 V
DD
and 0.7 V
DD
.
Figure 43: SPI timing diagram - master mode
High
NSS input
tc(SCK)
SCK Input
CPHA= 0
CPOL=0
CPHA= 0
CPOL=1
(1)
SCK Input
CPHA=1
CPOL=0
CPHA=1
CPOL=1
tsu(MI)
MISO
INP UT
MOSI
OUTUT
tw(SCKH)
tw(SCKL)
MS BIN
th(MI)
M SB OUT
tv(MO)
B I T1 OUT
th(MO)
ai14136
tr(SCK)
tf(SCK)
BI T6 IN
LSB IN
LSB OUT
1.
Measurement points are made at CMOS levels: 0.3 V
DD
and 0.7 V
DD
.
96/127
DocID14771 Rev 9