STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-channel 650V @ T
Jmax
- 0.4Ω - 11A TO-220/FP/D
2
PAK/I
2
PAK
MDmesh™ Power MOSFET
General features
Type
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
■
■
■
■
V
DSS
(@T
J
=T
Jmax
)
650V
650V
650V
650V
R
DS(on)
<0.45Ω
<0.45Ω
<0.45Ω
<0.45Ω
I
D
3
11A
11A
11A
11A
TO-220
1
2
3
1
2
TO-220FP
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
1
3
3
12
D
2
PAK
i
2
PAK
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STB11NM60T4
STB11NM60-1
STP11NM60
STP11NM60FP
Marking
B11NM60
B11NM60-1
P11NM60
P11NM60FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
January 2007
Rev 6
1/16
16
STMICROELECTRONICS [ STMICROELECTRONICS ]
