STB11NM80 - STF11NM80
STP11NM80 - STW11NM80
N-channel 800 V - 0.35
Ω
- 11 A - TO-220/FP- D
2
PAK - TO-247
MDmesh™ Power MOSFET
Features
Type
STB11NM80
STF11NM80
STP11NM80
V
DSS
800 V
800 V
800 V
R
DS(on)
<
0.40
Ω
<
0.40
Ω
<
0.40
Ω
<
0.40
Ω
R
DS(on)
*Q
g
14Ω*nC
14Ω*nC
14Ω*nC
14Ω*nC
I
D
11 A
11 A
11 A
11 A
3
1
TO-247
D²PAK
STW11NM80 800 V
■
■
■
Low input capacitance and gate charge
Low gate input resistance
Best R
DS(on)
*Qg in the industry
3
1
2
3
1
2
TO-220
TO-220FP
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
The MDmesh™ associates the multiple drain
process with the Company’s PowerMesh™
horizontal layout assuring an outstanding low on-
resistance. The adoption of the Company’s
proprietary strip technique yields overall dynamic
performance that is significantly better than that of
similar competition’s products.
Table 1.
Device summary
Marking
B11NM80
F11NM80
P11NM80
W11NM80
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Order codes
STB11NM80
STF11NM80
STP11NM80
STW11NM80
December 2007
Rev 9
1/17
17