N-CHANNEL 60V - 0.08
Ω
- 16A TO-220/TO-220FP
STripFET™ II POWER MOSFET
TYPE
STP16NF06
STP60NF06FP
s
s
s
s
STP16NF06
STP16NF06FP
V
DSS
60 V
60 V
R
DS(on)
<0.1
Ω
<0.1
Ω
I
D
16 A
11 A
TYPICAL R
DS
(on) = 0.08Ω
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE AT 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
TO-220
3
1
2
1
2
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt
(1)
E
AS (2)
V
ISO
T
stg
T
j
Parameter
STP16NF06
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
16
11
64
45
0.3
20
130
--------
-55 to 175
2500
60
60
± 20
11(*)
7.5(*)
44(*)
25
0.17
Value
STP16NF06FP
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
°C
Unit
(•) Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance
(1) I
SD
≤
16A, di/dt
≤
200A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 8A, V
DD
= 30V
April 2002
.
1/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
