STP21N06L
STP21N06LFI
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE
STP21N06L
STP21N06LFI
s
s
s
s
s
s
s
s
V
DSS
60 V
60 V
R
DS( on)
< 0.085
Ω
< 0.085
Ω
I
D
21 A
14 A
TYPICAL R
DS(on)
= 0.065
Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
LOGIC LEVEL COMPATIBLE INPUT
175
o
C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
1
2
3
TO-220
ISOWATT220
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STP21N06L
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(•)
P
tot
V
ISO
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
21
14
84
80
0.53
-65 to 175
175
60
60
±
15
14
9
84
35
0.23
2000
Value
STP21N06LFI
V
V
V
A
A
A
W
W/
o
C
V
o
o
Unit
C
C
(•) Pulse width limited by safe operating area
July 1993
1/10
STMICROELECTRONICS [ STMICROELECTRONICS ]
