STP40NF12
N-CHANNEL 120V - 0.028Ω - 40A TO-220
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
STP40NF12
s
s
s
s
V
DSS
120 V
R
DS(on)
< 0.032
Ω
I
D
40 A
TYPICAL R
DS
(on) = 0.028Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
TO-220
3
1
2
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt (1)
E
AS
(2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
120
120
± 20
40
28
160
150
1
14
150
– 55 to 175
(1) I
SD
≤40A,
di/dt
≤600A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25°C, I
D
= 40A, V
DD
= 50V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
(
q
) Pulse width limited by safe operating area
October 2003
1/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
