STD65NF06 - STP65NF06
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
60
20
V
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
60
A
ID
42
A
(1)
IDM
Ptot
240
110
0.73
10
A
Total dissipation at TC = 25°C
Derating Factor
W
W/°C
V/ns
mJ
dv/dt (2)
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
(3)
EAS
390
Tstg
Tj
-55 to 175
°C
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤60A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
3. Starting Tj = 25 °C, ID = 30A, VDD = 40V
Table 2.
Thermal data
Symbol
Parameter
TO-220
DPAK
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb(1) Thermal resistance junction-pcb max
1.36
°C/W
°C/W
°C/W
°C/W
62.5
--
--
50
--
Tl
Maximum lead temperature for soldering
purpose (for 10sec. 1.6mm from case)
300
1. When mounted on FR-4 of 1 inch², 2 oz Cu
3/14
STMICROELECTRONICS [ ST ]
