®
STTH506DTI
Tandem 600V HYPERFAST BOOST DIODE
MAJOR PRODUCTS CHARACTERISTICS
1
2
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
I
RM
(typ.)
t
rr
(typ.)
5A
600 V
150 °C
2.4 V
3.6 A
12 ns
2
1
FEATURES AND BENEFITS
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS
DESIGNED FOR HIGH dI
F
/dt OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
INSULATION
(2500V
RMS
)
ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK
STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
Package Capacitance: C=7pF
s
s
s
s
s
s
Insulated TO-220AC
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300V dice in
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
high dI
F
/dt.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(RMS)
I
FSM
Ipeak
T
stg
Tj
Parameter
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current
Peak current waveform
Storage temperature range
Maximum operating junction temperature
tp = 10 ms sinusoidal
δ
= 0.15 Tc = 140°C
Value
600
14
60
8
-65 +150
+ 150
Unit
V
A
A
A
°C
°C
October 2003 - Ed: 2A
1/5
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