STW45NM50
N-CHANNEL 550V @ Tjmax - 0.08Ω - 45A TO-247
MDmesh™ MOSFET
Table 1: General Features
TYPE
STW45NM50
s
s
s
s
Figure 1: Package
R
DS(on)
< 0.1Ω
I
D
45 A
V
DSS
(
@
Tjmax)
550V
s
s
TYPICAL R
DS
(on) = 0.08Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
3
2
1
TO-247
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizon-
tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar competi-
tion’s products.
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE
STW45NM50
MARKING
W45NM50
PACKAGE
TO-247
PACKAGING
TUBE
Rev. 2
March 2005
1/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
