STW45NM60
N-CHANNEL 600V - 0.09Ω - 45A TO-247
MDmesh™Power MOSFET
TYPE
STW45NM60
n
n
n
n
n
n
V
DSS
600V
R
DS(on)
< 0.11Ω
I
D
45 A
TYPICAL R
DS
(on) = 0.09Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
3
2
1
TO-247
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
600
600
±30
45
28
180
417
3.33
15
–65 to 150
150
(1) I
SD
≤45A,
di/dt
≤400A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(•)Pulse width limited by safe operating area
August 2002
1/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
