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TIP102 参数 Datasheet PDF下载

TIP102图片预览
型号: TIP102
PDF下载: 下载PDF文件 查看货源
内容描述: 互补硅功率达林顿晶体管 [COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS]
分类和应用: 晶体晶体管达林顿晶体管
文件页数/大小: 4 页 / 91 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
 浏览型号TIP102的Datasheet PDF文件第1页浏览型号TIP102的Datasheet PDF文件第3页浏览型号TIP102的Datasheet PDF文件第4页  
TIP102 / TIP107
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
1.56
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CEO
I
CBO
I
EBO
Parameter
Collector Cut-off
Current (I
B
= 0)
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= 50 V
V
CB
= 100 V
V
EB
= 5 V
I
C
= 30 mA
100
Min.
Typ.
Max.
50
50
8
Unit
µA
µA
mA
V
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
*
V
BE
*
h
FE
*
V
F
*
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Forward Voltage of
Commutation Diode
(I
B
= 0)
I
C
= 3 A
I
C
= 8 A
I
C
= 8 A
I
C
= 3 A
I
C
= 8 A
I
F
= - I
C
= 10 A
I
B
= 6 mA
I
B
= 80 mA
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
1000
200
2
2.5
2.8
20000
2.8
V
V
V
V
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
2/4