VN380
THERMAL DATA
HEPT AW ATT
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient (∗)
Max
Max
1.8
60
Po werSO -10
1.67
50
o
o
C/W
C/W
(∗) When mounted using minimum recommended pad size on FR-4 board.
ELECTRICAL CHARACTERISTICS
(10V < V
PWR1
< 18 V; - 40
o
C < T
J
< 150
o
C unless otherwise
specified)
POWER
Symb ol
V
pwr1
R
on1
R
on2
V
ce( sa t )
Parameter
Operating Voltage
On State Resistance
(excitation path)
On State Resistance
(recirculation path)
Saturation Voltage of
Bipolar S2
I
lo ad
= I
n
= 5 A
V
i nA
= V
in B
= 5 V
V
pwr1
= 13 V
V
i nA
= 5 V
I
load
= I
n
= 5 A
V
in B
= G ND
Test Cond ition s
Min.
6
Typ .
13
Max.
24
0.2
0.4
2
2
Un it
V
Ω
Ω
V
V
Iload = I
n
= 5 A
V
pwr1
= V
pwr2
= 13 V
I
lo ad
= 10 A
T
J
> 125
o
C
V
pwr1
= V
pwr2
= 13 V
V
pwr1
= 13 V
V
pwr1
= 18 V
V
inA
= V
in B
= 5 V
V
in A
= V
in B
= GND
I
sq
I
lk
I
of f
Supply Q uiescent
Current
Output Leakage
Current
Off State Supply
Current
V
i nA
= V
in B
= G ND
V
pwr1
= Not Connected
10V < V
pwr2
< 24 V
T
J
= 25
o
C
SWITCHING (EXCITATION PATH)
Symb ol
t
d(on)
t
r
t
d(of f)
t
f
Parameter
Turn-on Delay Time
Rise Time of Output
Current
Turn-off Delay Time
LOGIC INPUT
O
so
b
Symb ol
V
il
V
i h
V
i(h ys t)
V
i(CL)
I
in
te
le
Fall T ime of O utput
Current
ro
P
uc
d
R
load
= 2.5
Ω
s)
t(
so
b
-O
P
te
le
Min.
od
r
s)
t(
uc
25
5
50
µA
mA
mA
Test Cond ition s
V
in A
= 5 V (see fig.1)
V
in A
= 5 V (see fig.1)
V
in A
= 5 V (see fig.1)
V
i nA
= 5 V (see fig.1)
Typ .
Max.
50
Un it
µs
µs
µs
µs
R
load
= 2.5
Ω
R
load
= 2.5
Ω
1
20
50
R
load
= 2.5
Ω
1
20
Parameter
Input Low Level
Voltage
Input High Level
Voltage
Input hysteresis
Voltage
Input Clamp Voltage
Input Current
Test Cond ition s
Min.
Typ .
Max.
1.5
Un it
V
V
3.5
0.5
Iin = 10 mA
VinA = V
in B
= 2 V
V
i nA
= V
in B
= 5 V
8
20
250
0.8
9.5
2
11
V
V
µA
µA
3/9
STMICROELECTRONICS [ STMICROELECTRONICS ]
