VN5010AK-E
Electrical specifications
2.2
Electrical characteristics
Values specified in this section are for 8V< V
CC
< 36V; -40°C< T
j
< 150°C, unless otherwise
stated (for each channel).
Table 6.
Symbol
V
CC
V
USD
V
USDhyst
R
ON
V
clamp
I
S
I
L(off)
V
F
Power section
Parameter
Operating supply
voltage
Undervoltage
shutdown
Undervoltage
shutdown hysteresis
On state resistance
Clamp voltage
Supply current
Off state output
current
Output - V
CC
diode
voltage
I
OUT
= 6A; T
j
= 25°C
I
OUT
= 6A; T
j
= 150°C
I
CC
= 20 mA
Off State; V
CC
= 13V; T
j
= 25°C;
V
IN
=V
OUT
=V
SENSE
=V
CSD
=0V
V
IN
=V
OUT
=0V; V
CC
= 13V; T
j
= 25°C
V
IN
=V
OUT
=0V; V
CC
= 13V; T
j
= 125°C
-I
OUT
= 10A; T
j
= 150°C
0
0
41
46
2
(1)
0.01
Test conditions
Min.
4.5
Typ. Max. Unit
13
3.5
0.5
10
20
52
5
(1)
3
5
0.7
36
4.5
V
V
V
mΩ
mΩ
V
µA
µA
V
1. PowerMOS leakage included.
.
Table 7.
Symbol
t
d(on)
t
d(off)
(dV
OUT
/dt)
on
(dV
OUT
/dt)
off
W
ON
W
OFF
Switching (V
CC
=13V)
Parameter
Turn-On delay time
Turn-Off delay time
Turn-On voltage
slope
Turn-Off voltage
slope
Switching energy
losses during t
won
Switching energy
losses during t
woff
Test conditions
R
L
= 2.6Ω (see
R
L
= 2.6Ω (see
R
L
= 2.6Ω
R
L
= 2.6Ω
R
L
= 2.6Ω (see
R
L
= 2.6Ω (see
Min.
Typ.
35
65
See
See
1.5
0.8
Max.
Unit
µs
µs
V/ µs
V/ µs
mJ
mJ
9/31
STMICROELECTRONICS [ STMICROELECTRONICS ]
