Application Information
VN5160S-E
3
Application Information
Figure 28. Application schematic
+5V
+5V
V
CC
R
prot
STAT_DIS
D
ld
R
INPUT
prot
µC
OUTPUT
STATUS
R
prot
GND
R
GND
V
D
GND
GND
3.1
GND protection network against reverse battery
3.1.1
Solution 1: resistor in the ground line (R
only)
GND
This can be used with any type of load.
The following is an indication on how to dimension the R
resistor.
GND
1.
2.
R
R
≤600mV / (I
)
GND
GND
S(on)max
≥ (−V ) / (-I
)
CC
GND
where -I
is the DC reverse ground pin current and can be found in the absolute
GND
maximum rating section of the device datasheet.
Power dissipation in R
(when V <0: during reverse battery situations) is:
CC
GND
2
P = (-V ) / R
D
CC
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum On-state currents of the different devices.
becomes the sum of the
S(on)max
Please note that if the microprocessor ground is not shared by the device ground then the
will produce a shift (I * R ) in the input thresholds and the status output
R
GND
S(on)max
GND
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
.
GND
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
20/31
STMICROELECTRONICS [ ST ]
