VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1
THERMAL DATA
Symbol
R
thj-case
R
thj-lead
R
thj-amb
(*)
When
Parameter
Thermal Resistance Junction-case}}}
Thermal Resistance Junction-lead
Thermal Resistance Junction-ambient
MAX
MAX
MAX
SOT-223
18
70(*)
Value
SO-8
DPAK
3.5
15
65(*)
54(*)
IPAK
3.5
100
Unit
°C/W
°C/W
°C/W
mounted on a standard single-sided FR4 board with 50mm
2
of Cu (at least 35
µm
thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS
(-40°C < T
j
< 150°C, unless otherwise specified)
OFF
Symbol
V
CLAMP
V
CLTH
V
INTH
I
ISS
V
INCL
I
DSS
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage
Zero Input Voltage Drain
Current (V
IN
=0V)
Test Conditions
V
IN
=0V; I
D
=1.5A
V
IN
=0V; I
D
=2mA
V
DS
=V
IN
; I
D
=1mA
V
DS
=0V; V
IN
=5V
I
IN
=1mA
I
IN
=-1mA
V
DS
=13V; V
IN
=0V; T
j
=25°C
V
DS
=25V; V
IN
=0V
6
-1.0
Min
40
36
0.5
100
6.8
2.5
150
8
-0.3
30
75
Typ
45
Max
55
Unit
V
V
V
µA
V
µA
ON
Symbol
R
DS(on)
Parameter
Static Drain-source On
Resistance
Test Conditions
V
IN
=5V; I
D
=1.5A; T
j
=25°C
V
IN
=5V; I
D
=1.5A
Min
Typ
Max
120
240
Unit
mΩ
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STMICROELECTRONICS [ STMICROELECTRONICS ]
