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VNP35NV04 参数 Datasheet PDF下载

VNP35NV04图片预览
型号: VNP35NV04
PDF下载: 下载PDF文件 查看货源
内容描述: OMNIFET II完全autoprotected功率MOSFET [OMNIFET II FULLY AUTOPROTECTED POWER MOSFET]
分类和应用: 外围驱动器驱动程序和接口接口集成电路局域网
文件页数/大小: 19 页 / 306 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
THERMAL DATA
Symbol
R
thj-case
R
thj-amb
(*)
When
PowerSO-10
Thermal Resistance Junction-case}}} MAX
1
Thermal Resistance Junction-ambient MAX
50(*)
Parameter
Value
D2PAK
1
50(*)
TO-220
1
50
TO-247
0.6
30
Unit
°C/W
°C/W
mounted on a standard single-sided FR4 board with 50mm
2
of Cu (at least 35
µm
thick) connected to all DRAIN pins.
ELECTRICAL CHARACTERISTICS
(-40°C < T
j
< 150°C, unless otherwise specified)
OFF
Symbol
V
CLAMP
V
CLTH
V
INTH
I
ISS
V
INCL
I
DSS
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage
Zero Input Voltage Drain
Current (V
IN
=0V)
Test Conditions
V
IN
=0V; I
D
=15A
V
IN
=0V; I
D
=2mA
V
DS
=V
IN
; I
D
=1mA
V
DS
=0V; V
IN
=5V
I
IN
=1mA
I
IN
=-1mA
V
DS
=13V; V
IN
=0V; T
j
=25°C
V
DS
=25V; V
IN
=0V
6
-1.0
Min
40
36
0.5
100
6.8
2.5
150
8
-0.3
30
75
Typ
45
Max
55
Unit
V
V
V
µA
V
µA
ON
Max
Symbol
Parameter
Static Drain-source On
Resistance
Test Conditions
V
IN
=5V; I
D
=15A; T
j
=25°C
V
IN
=5V; I
D
=15A; T
j
=150°C
PowerSO-10
10
20
D
2
PAK
TO-220 / TO-247
13
24
Unit
R
DS(on)
mΩ
3/19
1