®
VNQ660SP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
VNQ660SP
(*) Per each channel
R
DS(on)
50mΩ (*)
I
OUT
6A
V
CC
36 V
OUTPUT CURRENT PER CHANNEL: 6A
s
CMOS COMPATIBLE INPUTS
s
OPEN LOAD DETECTION (OFF STATE)
s
UNDERVOLTAGE & OVERVOLTAGE
n
SHUT- DOWN
s
OVERVOLTAGE CLAMP
s
THERMAL SHUT-DOWN
s
CURRENT LIMITATION
s
VERY LOW STAND-BY POWER DISSIPATION
s
PROTECTION AGAINST:
n
LOSS OF GROUND & LOSS OF V
CC
s
REVERSE BATTERY PROTECTION (**)
s
10
1
PowerSO-10™
ORDER CODES
PACKAGE
TUBE
T&R
VNQ660SP13TR
PowerSO-10™
VNQ660SP
DESCRIPTION
The VNQ660SP is a monolithic device made by
using|
STMicroelectronics
VIPower
M0-3
ABSOLUTE MAXIMUM RATING
Symbol
V
CC
-V
CC
I
OUT
I
R
I
IN
I
STAT
I
GND
Parameter
Technology, intended for driving resistive or
inductive loads with one side connected to ground.
This device has four independent channels. Built-
in thermal shut down and output current limitation
protect the chip from over temperature and short
circuit.
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), per each channel
Reverse output current (continuous), per each channel
Input current
Status current
Ground current at T
C
<25°C (continuous)
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
Power dissipation at T
C
=25°C
Junction operating temperature
Storage temperature
Non repetitive clamping energy at T
C
=25°C
Value
41
-0.3
Internally limited
-15
+/- 10
+/- 10
-200
4000
4000
5000
5000
113.6
-40 to 150
-65 to 150
150
Unit
V
V
A
A
mA
mA
mA
V
V
V
V
W
°C
°C
mJ
V
ESD
P
tot
T
j
T
stg
E
C
(**) See application schematic at page 8
July 2003
1/16
STMICROELECTRONICS [ STMICROELECTRONICS ]
