®
VNQ810
QUAD CHANNEL HIGH SIDE DRIVER
TYPE
VNQ810
(*)
Per each channel
R
DS(on)
160 mΩ (*)
I
OUT
3.5 A (*)
V
CC
36 V
CMOS COMPATIBLE INPUTS
s
OPEN DRAIN STATUS OUTPUTS
s
ON STATE OPEN LOAD DETECTION
s
OFF STATE OPEN LOAD DETECTION
s
SHORTED LOAD PROTECTION
s
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s
PROTECTION AGAINST LOSS OF GROUND
s
VERY LOW STAND-BY CURRENT
s
s
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
VNQ810
T&R
VNQ81013TR
REVERSE BATTERY PROTECTION (**)
SO-28
DESCRIPTION
The VNQ810 is a quad HSD formed by
assembling two VND810 chips in the same SO-28
package. The VND810 is a monolithic device
made by using STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active V
CC
pin voltage clamp protects the device
ABSOLUTE MAXIMUM RATING
Symbol
V
CC
- V
CC
- I
gnd
I
OUT
- I
OUT
I
IN
I
STAT
Parameter
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload. The
device detects open load condition both in on and
off state . Output shorted to V
CC
is detected in the
off state. Device automatically turns off in case of
ground pin disconnection.
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
DC Status Current
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
Maximum Switching Energy
(L=1.38mH; R
L
=0Ω; V
bat
=13.5V; T
jstart
=150ºC; I
L
=5A)
Power dissipation (per island) at T
lead
=25°C
Junction Operating Temperature
Storage Temperature
Value
41
- 0.3
- 200
Internally Limited
-6
+/- 10
+/- 10
4000
4000
5000
5000
23
6.25
Internally Limited
- 55 to 150
Rev. 1
Unit
V
V
mA
A
A
mA
mA
V
V
V
V
mJ
W
°C
°C
V
ESD
E
MAX
P
tot
T
j
T
stg
(**) See application schematic at page 9
July 2004
1/21
STMICROELECTRONICS [ STMICROELECTRONICS ]
