2N6660/2N6661
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
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Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-Channel devices
General Description
The Supertex 2N6660 and 2N6661 are enhancement-
mode (normally-off) transistors that utilizes a vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors,
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
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Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
2N6660
2N6661
Package
TO-39
TO-39
BV
DSS
/BV
DGS
(V)
60
90
R
DS(ON)
(max)
(Ω)
3.0
4.0
I
D(ON)
(min)
(A)
1.5
1.5
Absolute Maximum Ratings
Parameter
Drain to source voltage
Drain to gate voltage
Gate to source voltage
Operating and storage temperature
Soldering temperature
1
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
+300°C
Pin Configuration
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1.
Distance of 1.6mm from case for 10 seconds.
DGS
TO-39
Case: DRAIN
SUPERTEX [ Supertex, Inc ]
