LND150
N-Channel Depletion-Mode
DMOS FET
Features
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Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low C
ISS
ESD gate protection
General Description
The LND150 is a high voltage N-channel depletion mode
(normally-on) transistor utilizing Supertex’s lateral DMOS
technology. The gate is ESD protected.
The LND150 is ideal for high voltage applications in the
areas of normally-on switches, precision constant current
sources, voltage ramp generation and amplification.
Applications
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
Input protection circuits
Ordering Information
Device
LND150
Package Options
TO-236AB (SOT-23)
LND150K1-G
TO-92
LND150N3-G
TO-243AA (SOT-89)
LND150N8-G
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
(KΩ)
I
DSS
(min)
(mA)
500
1.0
1.0
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source
Drain-to-gate
Gate-to-source
Operating and storage temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
GATE
SOURCE
SOURCE
GATE
TO-92 (N3)
SOURCE
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
DRAIN
DRAIN
GATE
SOURCE
TO-236AB (SOT-23) (K1)
TO-243AA (SOT-89) (N8)
Product Marking
NDEW
W = Code for Week Sealed
= “Green” Packaging
Si
LN
D1 50
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
LN1EW
W = Code for Week Sealed
= “Green” Packaging
TO-236AB (SOT-23) (K1)
TO-92 (N3)
Packages may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
SUPERTEX [ Supertex, Inc ]
