SPN2302W
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2302W is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
20V/3.6A,R
DS(ON)
= 97mΩ@V
GS
=4.5V
20V/3.1A,R
DS(ON)
= 113mΩ@V
GS
=2.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION(SOT-23)
PART MARKING
S02WYW
2012/08/06
Ver.2
Page 1
SYNC-POWER [ SYNC POWER CROP. ]
