NPN Small Signal General Purpose Transistors
2N5089
Electrical Characteristics
(T
Ambient
=25ºC unless noted otherwise)
Symbol
V
(
BR)CEO
V
(
BR) CBO
I
CBO
I
EBO
Description
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
MIN
25
30
--
--
400
MAX
--
--
50
100
1200
--
--
0.5
0.8
Unit
V
V
Conditions
Open Emitter
Open Base
IE = 0; VCB =20V
I
C
= 0; VEB = 4.5 V
I
C
= 100 µA; VCE = 5 V
I
C
= 1 mA; VCE = 5 V
I
C
= 10 mA; VCE = 5 V
nA
nA
h
FE
DC Current Gain
450
400
V
CE(
sat)
V
BE(
on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
transition frequency
Collector-Base Capacitance
Emmiter-Base Capacitance
Small-Signal Current Gain
Noise Figure
--
V
V
MHz
pF
pF
I
C
= 10 mA; IB =1mA
I
C
= 10 mA; VCE =5V
IC = 500 µA; VCE = 5 V;
f = 20 MHz
IE= 0; VCB =5V; f=100KHz
IC= 0; VCB =5V; f=100KHz
IC = 1.0 mA, VCE = 5 V,
f = 1.0 kHz
f
T
Cc
Ce
50
--
--
450
--
--
4.0
10
1800
2.0
h
fe
NF
dB
I
C
= 100
µA,
V
CE
= 5.0 V,
R
S
=10 kΩ, f=10 Hz to 15.7 Hz
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