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Q6016RH6 参数 Datasheet PDF下载

Q6016RH6图片预览
型号: Q6016RH6
PDF下载: 下载PDF文件 查看货源
内容描述: 交变三端双向可控硅 [Alternistor Triacs]
分类和应用: 栅极触发装置可控硅三端双向交流开关LTE局域网
文件页数/大小: 10 页 / 190 K
品牌: TECCOR [ TECCOR ELECTRONICS ]
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Alternistor Triacs
Data Sheets
200
2.0
Peak Surge (Non-Repetitive)
On-state Current (I
TSM
) – Amps
V
GT
(T
C
= 25 ˚C)
120
100
80
60
50
40
30
20
10 A to 12 A Devices
8 A Devices
Notes:
1) Gate control may be lost during and
immediately following surge current
interval
2) Overload may not be repeated until
junction temperature has returned
to steady state rated value.
1.5
V
GT
8 A TO-251
and TO-252
6 A Devices
6 A TO-251
and TO-252
1.0
Ratio of
.5
10
8
6
5
4
3
2
0
-65
-40
-15
+25
+65
+125
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Rated Value at Specified Case Temperature
1
1
2
3 4 5 6
8 10
20
30 40
60 80 100
200
300
600
1000
Case Temperature (T
C
) – ˚C
Surge Current Duration – Full Cycles
Figure E4.7 Normalized DC Gate Trigger Voltage for all Quadrants
versus Case Temperature
Figure E4.10 Peak Surge Current versus Surge Current Duration
(6 A to 12 A)
1000
Peak Surge (Non-repetitive)
On-state Current (I
TSM
) – Amps
4.0
I
GT
(T
C
= 25 ˚C)
400
300
250
200
SUPPLY FREQUENCY: 60Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [I
T(RMS)
]: Maximum
Rated Value at Specified Case Temperature
3.0
I
GT
40 A Devices
35 A Devices
2.0
100
80
60
50
40
30
20
30 A Devices
Notes:
1) Gate control may be lost during and
immediately following surge current
interval.
2) Overload may not be repeated until
junction temperature has returned to
steady-state rated value.
Ratio of
1.0
25 A Devices
16 A Devices
0
-65
-40
-15
+25
+65
+125
10
1
Case Temperature (T
C
) – ˚C
10
100
1000
Surge Current Duration – Full Cycles
Figure E4.8 Normalized DC Gate Trigger Current for all Quadrants
versus Case Temperature
Figure E4.11 Peak Surge Current versus Surge Current Duration
(16 A to 40 A)
4.0
INITIAL ON-STATE CURRENT
= 400 mA dc 16 A to 40 A Devices
= 100 mA dc 6 to 12A Devices
10
I
H
(T
C
= 25 ˚C)
Typical Turn-on
Time (t
gt
) – µs
3.0
8
I
GT
= 80 to 100 mA
6
I
H
2.0
4
I
GT
= 50 mA
2
I
GT
= 10 mA to 35 mA
Ratio of
1.0
0
-65
0
0
100
200
300
400
500
-40
-15
+25
+65
+125
Case Temperature (T
C
) – ˚C
DC Gate Trigger Current ( I
GT
) – mA
Figure E4.9 Normalized DC Holding Current versus Case Temperature
Figure E4.12 Turn-on Time versus Gate Trigger Current (Typical)
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+1 972-580-7777
E4 - 8
©2002 Teccor Electronics
Thyristor Product Catalog