1N4148.1N4448
Silicon Epitaxial Planar Diodes
Features
D
Electrically equivalent diodes:
1N4148 – 1N914
1N4448 – 1N914B
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
p
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
P
V
T
j
T
stg
Value
100
75
2
500
300
150
440
500
200
–65...+200
Unit
V
V
A
mA
mA
mA
mW
mW
°
C
°
C
t
p
=1
m
s
V
R
=0
l=4mm, T
L
=45
°
C
l=4mm, T
L
25
°
C
x
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4mm, T
L
=constant
Symbol
R
thJA
Value
350
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
1 (4)
TEMIC [ TEMIC SEMICONDUCTORS ]
