TIGER ELECTRONIC CO.,LTD
Product specification
60V N-Channel MOSFET
DESCRIPTION
FQP50N06
These N-Channel enhancement mode power field effect transistors are produced using Fairchild
’
s
proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well suited for low voltage applications such as
automotive, DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
O
Parameter
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
l
V
DSS
I
D
I
DM
V
GSS
P
D
T
j
T
stg
Value
60
50
200
±
25
120
150
-55~150
Unit
V
A
A
V
W
o
o
C
C
Storage Temperature
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25
O
C)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Voltage
Symbol
Test Conditions
Min.
60
—
—
—
2.0
—
—
—
Typ.
—
—
—
—
—
18
22
—
Max.
—
1.0
100
-100
4.0
22
—
1.5
Unit
V
uA
nA
nA
V
m
Ω
S
V
BV
DSS
V
GS
= 0V, I
D
=250
μ
A
I
DSS
I
GSSF
I
GSSR
V
GS(th)
g
FS
V
DS
=60V, V
GS
=0V
V
GS
=25V, V
DS
=0V
V
GS
= -25V, V
DS
=0V
V
DS
= V
GS
, I
D
=250
μ
A
R
DS(on)
V
GS
= 10 V, I
D
= 25 A
V
DS
= 25 V, I
D
= 25 A
V
GS
= 0 V, I
S
= 50 A
V
SD
TGS [ Tiger Electronic Co.,Ltd ]
