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MUR2020DT PDF Datasheet浏览和下载

型号:
MUR2020DT
PDF下载:
下载PDF文件 在线浏览文档
内容描述:
[20.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers]
文件大小:
703 K
文件页数:
2 Pages
品牌Logo:
品牌名称:
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]



 浏览型号MUR2020DT的Datasheet PDF文件第2页 
MUR2020DT thru MUR2060DT
MUR2020DT/MUR2040DT/MUR2060DT
Pb
Pb Free Plating Product
20.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
Mechanical Data
Case: Heatsink TO-220AB open metal package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Case
Positive
Common Cathode
Suffix "CT"
Negative
Common Anode
Suffix "AT"
Series
Tandem Polarity
Suffix "ST"
Doubler
Tandem Polarity
Suffix "DT"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=125
(Total Device 2x10A=20A)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 10.0 A
(Per Diode/Per Leg)
Maximum DC Reverse Current @T
J
=25
At Rated DC Blocking Voltage @T
J
=125
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
V
F
0.98
1.3
5.0
100
35
120
2.0
-55 to + 150
70
1.7
V
I
FSM
200
MUR2020DT
200
140
200
MUR2040DT
400
280
400
20.0
MUR2060DT
600
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
A
I
R
Trr
C
J
R
JC
T
J
, T
STG
μA
μA
nS
pF
/W
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/