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UGF1004G PDF Datasheet浏览和下载

型号:
UGF1004G
PDF下载:
下载PDF文件 在线浏览文档
内容描述:
[10.0 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers]
文件大小:
1058 K
文件页数:
2 Pages
品牌Logo:
品牌名称:
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]



 浏览型号UGF1004G的Datasheet PDF文件第2页 
UGF1004G thru UGF1008G
UGF1004G/UGF1005G/UGF1006G/UGF1007G/UGF1008G
Pb
Pb Free Plating Product
10.0 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers
Application
Mechanical Data
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 1.75 gram approximately
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.606(15.4)
.583(14.8)
Features
Ultra fast soft recovery switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
ITO-220AB/TO-220F-3L
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "G"
Suffix "GA"
Doubler
Tandem Polarity
Suffix "GD"
Series
Tandem Polarity
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 5 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
SYMBOL
UGF1004G UGF1005G UGF1006G UGF1007G UGF1008G
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
R
θJC
T
J
T
STG
- 55 to +175
- 55 to +175
20
6.0
- 55 to +150
- 55 to +150
0.95
1.25
10
100
25
200
140
200
300
210
300
400
280
400
10
70
1.70
500
350
500
600
420
600
V
V
V
A
A
V
μA
ns
°C/W
°C
°C
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/