SLUS606B
−
JUNE 2004
−
REVISED NOVEMBER 2004
bq24100, bq24103, bq24105
bq24108, bq24113, bq24115
ELECTRICAL CHARACTERISTICS (continued)
T
J
= 0°C to 125°C and recommended supply voltage range (unless otherwise stated)
PARAMETER
TTC INPUT
t
PRECHG
t
CHARGE
K
TTC
C
TTC
V
TTC_EN
Precharge timer
Programmable charge timer range
Charge timer accuracy
Timer multiplier
Charge time capacitor range
TTC enable threshold voltage
V
(TTC)
rising
V
CC
≤
TEST CONDITIONS
MIN
1440
TYP
1800
MAX
2160
572
10%
UNIT
s
minutes
min/nF
t
(CHG)
= C
(TTC)
×
K
(TTC)
0.01
µF ≤
C
(TTC)
≤
0.18
µF
25
−10%
2.6
0.01
200
0.22
µF
mV
SLEEP COMPARATOR
V
CC
≤
V
IBAT
+75mV
V
CC
≤
V
IBAT
+73mV
2.3 V
≤
V
I(OUT)
≤
V
OREG,
for 1 or 2 cells
V
SLP−ENT
Sleep mode entry threshold
Sleep-mode
V
I(OUT)
= 12.6 V,
R
IN
= 1 kΩ
(1)
bq24105/15
V
SLP−EXIT
Sleep-mode exit hysteresis,
2.3 V
≤
V
I(OUT)
≤
V
OREG
V
CC
decreasing below threshold,
t
FALL
= 100 ns, 10-mV overdrive, PMOS turns off
t
dg-SLP
Deglitch time for sleep mode
V
CC
decreasing below threshold,
t
FALL
= 100 ns, 10-mV overdrive, STATx pins
turn off
V
CC
rising
V
CC
falling
7 V
≤
V
CC
≤
V
CC(max)
4.5 V
≤
V
CC
≤
7 V
7 V
≤
V
CC
≤
V
CC(max)
4.5 V
≤
V
CC
≤
7 V
V
IBAT
+5 mV
V
CC
≤
V
IBAT
−4
mV
V
40
5
20
30
160
mV
µs
40
ms
UVLO
V
UVLO−ON
PWM
Internal P-channel MOSFET
P channel
on-resistance
Internal N-channel MOSFET
N channel
on-resistance
f
OSC
D
MAX
D
MIN
t
TOD
t
syncmin
Oscillator frequency
Frequency accuracy
Maximum duty cycle
Minimum duty cycle
Switching delay time (turn on)
Minimum synchronous FET on time
Synchronous FET minimum
current-off threshold
(2)
50
0%
20
60
400
ns
ns
mA
−9%
400
500
130
150
1.1
9%
100%
MHz
mΩ
IC active threshold voltage
IC active hysteresis
3.15
120
3.30
150
3.50
V
mV
6
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