SLPS224B
–
AUGUST 2009
–
REVISED NOVEMBER 2011
R
DS(ON)
vs V
GS
16
10
Gate Charge
I
D
= 24A
V
G
− Gate Voltage − V
9
8
7
6
5
4
3
2
I
D
= 24A
V
DS
= 12.5V
R
DS(on)
− On-State Resistance − mW
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
T
C
= 25
°
C
T
C
= 125
°
C
1
0
8
9
10
G006
0
2
4
6
8
10
12
14
G003
V
GS
− Gate to Source Voltage − V
Qg − Gate Charge − nC
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
PARAMETER
Static Characteristics
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
ISS
C
OSS
C
RSS
R
g
Q
g
Q
gd
Q
gs
Qg(th)
Q
OSS
t
d(on)
t
r
t
d(off)
t
f
V
SD
Q
rr
t
rr
Drain to Source Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
Gate Charge Gate to Source
Gate Charge at Vth
Output Charge
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Time
I
S
= 24A, V
GS
= 0V
V
DD
= 12.5V, I
F
= 24A, di/dt = 300A/μs
V
DD
= 12.5V, I
F
= 24A, di/dt = 300A/μs
V
DS
= 12.5V, V
GS
= 4.5V I
D
= 24A
R
G
= 2Ω
V
DS
= 12.5V, V
GS
= 0V
V
DS
= 12.5V, I
D
= 24A
V
GS
= 0V, V
DS
= 12.5V, f = 1MHz
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, V
DS
= 20V
V
DS
= 0V, V
GS
= +10/-8V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 3V, I
D
= 24A
V
GS
= 4.5V, I
D
= 24A
V
GS
= 8V, I
D
= 24A
V
DS
= 12.5V, I
D
= 24A
Dynamic Characteristics
1020
740
50
1.4
6.2
1.1
1.8
1
14
5.3
15
13
6.3
0.85
21
16
1
1300
960
65
2.8
8.4
pF
pF
pF
Ω
nC
nC
nC
nC
nC
ns
ns
ns
ns
V
nC
ns
0.9
1.1
5.4
4.4
3.8
108
25
1
100
1.4
7.2
5.5
4.5
V
μA
nA
V
mΩ
mΩ
mΩ
S
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Diode Characteristics
2
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©
2009–2011, Texas Instruments Incorporated