SLPS413 – DECEMBER 2013
80 V N-Channel NexFET™ Power MOSFET
Check for Samples:
1
FEATURES
Ultra-Low Q
g
and Q
gd
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
PRODUCT SUMMARY
T
A
= 25°C
V
DS
Q
g
Q
gd
R
DS(on)
V
GS(th)
Drain-to-Source Voltage
Gate Charge Total (10 V)
Gate Charge Gate to Drain
Drain-to-Source On Resistance
Threshold Voltage
TYPICAL VALUE
80
48
8.6
V
GS
= 6 V
V
GS
= 10 V
2.7
3.8
3.4
UNIT
V
nC
nC
mΩ
mΩ
V
•
•
•
•
•
•
•
•
2
ORDERING INFORMATION
Device
CSD19502Q5B
Package
SON 5-mm × 6-mm
Plastic Package
Media
13-Inch
Reel
Qty
2500
Ship
Tape and
Reel
APPLICATIONS
•
•
Secondary Side Synchronous Rectifier
Motor Control
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C
V
DS
V
GS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Package limited)
I
D
Continuous Drain Current (Silicon limited),
T
C
= 25°C
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
DESCRIPTION
This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S
1
8
D
VALUE
80
±20
100
138
20
200
3.2
–55 to 150
312
UNIT
V
V
A
I
DM
P
D
T
J
,
T
STG
E
AS
A
W
°C
mJ
S
2
7
D
Operating Junction and
Storage Temperature Range
Avalanche Energy, single pulse
I
D
= 79 A, L = 0.1 mH, R
G
= 25
Ω
S
3
D
6
D
G
4
5
D
P0093-01
(1) Typical R
θJA
= 40°C/W on a 1-inch
2
, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Pulse duration
≤300 μs,
duty cycle
≤2%
20
R
DS
(
on
)
- On-State Resistance (mΩ)
18
16
14
12
10
8
6
4
2
0
0
2
4
R
DS(on)
vs V
GS
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25°C, I
D
= 19A
T
C
= 125°C, I
D
= 19A
GATE CHARGE
10
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
Q
g
- Gate Charge (nC)
40
45
50
G001
I
D
= 19A
V
DS
= 40V
6
8
10
12
14
16
V
GS
- Gate-to- Source Voltage (V)
18
20
G001
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
Copyright © 2013, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TI [ TEXAS INSTRUMENTS ]
