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CSD25401Q3 参数 Datasheet PDF下载

CSD25401Q3图片预览
型号: CSD25401Q3
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道NexFETâ ?? ¢功率MOSFET [P-Channel NexFET™ Power MOSFETs]
分类和应用:
文件页数/大小: 11 页 / 392 K
品牌: TI [ TEXAS INSTRUMENTS ]
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SLPS211B – AUGUST 2009 – REVISED OCTOBER 2010
P-Channel NexFET™ Power MOSFETs
Check for Samples:
1
FEATURES
Ultra Low Q
g
and Q
gd
Low Thermal Resistance
Low R
DS(on)
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3mm x 3.3mm Plastic Package
Table 1. PRODUCT SUMMARY
V
DS
Q
g
Q
gd
R
DS(on)
V
th
Drain to Source Voltage
Gate Charge Total (4.5V)
Gate Charge Gate to Drain
Drain to Source On Resistance
Threshold Voltage
–20
8.8
2.1
V
GS
= –2.5V
V
GS
= –4.5V
–0.85
13.5
8.8
V
nC
nC
mΩ
mΩ
V
2
ORDERING INFORMATION
APPLICATIONS
DC-DC Converters
Battery Management
Load Switch
Battery Protection
Device
CSD25401Q3
Package
SON 3 × 3 Plastic
Package
Media
13-inch
reel
Qty
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C unless otherwise stated
V
DS
V
GS
I
D
I
DM
P
D
T
J
,
T
STG
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current, T
C
= 25°C
Continuous Drain Current
Pulsed Drain Current, T
A
= 25°C
Power Dissipation
VALUE
–20
+12 / -12
–60
–14
–82
2.8
–55 to 150
UNIT
V
V
A
A
A
W
°C
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion load
management applications. The SON 3×3 package
offers excellent thermal performance for the size of
the package.
Top View
D
1
8
S
Operating Junction and Storage
Temperature Range
(1) R
qJA
= 45°C/W on 1inch
2
Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width
≤300µs
, duty cycle
≤2%
D
2
7
S
D
3
4
S
6
5
S
G
S
R
DS(ON)
vs V
GS
30
10
I
D
= −10A
9
Gate Charge
I
D
= −10A
V
DS
= −10V
R
DS(on)
− On-State Resistance − mW
−V
G
− Gate Voltage − V
25
20
T
C
= 125
°
C
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
G006
8
7
6
5
4
3
2
1
0
0
T
C
= 25
°
C
2
4
6
8
10
12
14
16
G003
−V
GS
− Gate to Source Voltage − V
Q
g
− Gate Charge − nC
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
Copyright © 2009–2010, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.