CSD25302Q2
www.ti.com
SLPS234A – NOVEMBER 2009 – REVISED OCTOBER 2010
P-Channel NexFET™ Power MOSFET
1
FEATURES
Ultralow Q
g
and Q
gd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 2-mm × 2-mm Plastic Package
PRODUCT SUMMARY
V
DS
Q
g
Q
gd
R
DS(on)
V
GS(th)
Drain to Source Voltage
Gate Charge Total (–4.5V)
Gate Charge Gate to Drain
–20
2.6
0.5
V
GS
= –1.8V
Drain to Source On Resistance
V
GS
= –2.5V
V
GS
= –4.5V
Threshold Voltage
–0.65
71
56
39
V
nC
nC
mΩ
mΩ
mΩ
V
•
•
•
•
•
•
•
APPLICATIONS
•
•
•
Battery Management
Load Management
Battery Protection
Device
CSD25302Q2
ORDERING INFORMATION
Package
SON 2-mm × 2-mm
Plastic Package
Media
13-Inch
Reel
Qty
3000
Ship
Tape and
Reel
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile. Low on resistance coupled with the
extremely small footprint and low profile make the
device ideal for battery operated space constrained
applications.
Top View
S
1
S
6
S
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C unless otherwise stated
V
DS
V
GS
I
D
I
DM
P
D
T
J
,
T
STG
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current, T
C
= 25°C
Continuous Drain Current
VALUE
–20
±8
–5
–5
–20
2.4
–55 to 150
UNIT
V
V
A
A
A
W
°C
Pulsed Drain Current, T
A
= 25°C
Power Dissipation
Operating Junction and Storage
Temperature Range
(1) Package Limited
(2) Pulse duration 10 µs, duty cycle
≤2%
S
2
5
S
G
3
D
4
D
P0112-01
R
DS(on)
vs V
GS
150
R
DS(on)
− On-State Resistance − mΩ
I
D
= −3A
−V
GS
− Gate Voltage − V
6
5
4
3
2
1
GATE CHARGE
I
D
= −3A
V
DS
= −10V
125
100
75
50
25
T
C
= 25°C
0
1
2
3
4
5
6
7
8
G006
T
C
= 125°C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
G003
−V
GS
− Gate to Source Voltage − V
1
Q
g
− Gate Charge − nC
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Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated