SNOSBH0C – MAY 2000 – REVISED MARCH 2013
LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers
Check for Samples:
1
FEATURES
23
DESCRIPTION
These are the first monolithic JFET input operational
amplifiers to incorporate well matched, high voltage
JFETs on the same chip with standard bipolar
transistors ( BI-FET™ Technology). These amplifiers
feature low input bias and offset currents/low offset
voltage and offset voltage drift, coupled with offset
adjust which does not degrade drift or common-mode
rejection. The devices are also designed for high slew
rate, wide bandwidth, extremely fast settling time, low
voltage and current noise and a low 1/f noise corner.
Advantages
•
•
•
•
•
•
Replace Expensive Hybrid and Module FET Op
Amps
Rugged JFETs Allow Blow-Out Free Handling
Compared with MOSFET Input Devices
Excellent for Low Noise Applications Using
Either High or Low Source Impedance—Very
Low 1/f Corner
Offset Adjust Does Not Degrade Drift or
Common-Mode Rejection as in Most
Monolithic Amplifiers
New Output Stage Allows Use of Large
Capacitive Loads (5,000 pF) without Stability
Problems
Internal Compensation and Large Differential
Input Voltage Capability
Common Features
•
•
•
•
•
•
Low Input Bias Current: 30pA
Low Input Offset Current: 3pA
High Input Impedance: 10
12
Ω
Low Input Noise Current: 0.01 pA/√Hz
High Common-Mode Rejection Ratio: 100 dB
Large DC Voltage Gain: 106 dB
Table 1. Uncommon Features
LF155/
LF355
Extremely fast
settling time to 0.01%
Fast slew rate
Wide gain bandwidth
Low input noise
voltage
4
5
2.5
20
LF156/
LF256/
LF356
1.5
12
5
12
LF257/
LF357
(A
V
=5)
1.5
50
20
12
Units
APPLICATIONS
•
•
•
•
•
•
•
Precision High Speed Integrators
Fast D/A and A/D Converters
High Impedance Buffers
Wideband, Low Noise, Low Drift Amplifiers
Logarithmic Amplifiers
Photocell Amplifiers
Sample and Hold Circuits
μs
V/µs
MHz
nV /
√Hz
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
BI-FET is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
Copyright © 2000–2013, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TI [ TEXAS INSTRUMENTS ]
