SNVS771B – MAY 1998 – REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1) (2) (3)
Power Dissipation
Input/Output Voltage Differential
Storage Temperature
Lead Temperature
TO-3 Package (Soldering, 10 seconds)
TO-220 Package (Soldering, 4 seconds)
ESD Tolerance
(1)
(2)
(3)
Internally limited
+40V,
−0.3V
−65°C
to +150°C
300°C
260°C
TBD
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics.
Refer to RETS138K drawing for military specifications of LM138K.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
Operating Temperature Range
LM138
LM338
−55°C ≤
T
J
≤
+150°C
0°C
≤
T
J
≤
+125°C
Electrical Characteristics
Specifications with standard type face are for T
J
= 25°C, and those with
boldface type
apply over
full Operating
Temperature Range.
Unless otherwise specified, V
IN
−
V
OUT
= 5V; and I
OUT
= 10 mA.
(1)
Symbol
V
REF
V
RLINE
V
RLOAD
Parameter
Reference Voltage
Line Regulation
Load Regulation
Thermal Regulation
I
ADJ
ΔI
ADJ
ΔV
R/T
I
LOAD
(Min)
I
CL
Adjustment Pin Current
Adjustment Pin Current Change
Temperature Stability
Minimum Load Current
Current Limit
10 mA
≤
I
OUT
≤
5A,
3V
≤
(V
IN
−
V
OUT
)
≤
35V
T
MIN
≤
T
J
≤
T
MAX
V
IN
−
V
OUT
= 35V
V
IN
−
V
OUT
≤
10V
DC
0.5 ms Peak
V
IN
−
V
OUT
= 30V
V
N
ΔV
R
/ΔV
IN
RMS Output Noise, % of V
OUT
Ripple Rejection Ratio
Long-Term Stability
θ
JC
Thermal Resistance,
Junction to Case
10 Hz
≤
f
≤
10 kHz
V
OUT
= 10V, f = 120 Hz, C
ADJ
= 0
μF
V
OUT
= 10V, f = 120 Hz, C
ADJ
= 10
μF
T
J
= 125°C, 1000 Hrs
NDS Package
60
5
7
8
12
1
0.003
60
75
0.3
1
1
1
A
A
A
%
dB
dB
%
°C/W
Conditions
3V
≤
(V
IN
−
V
OUT
)
≤
35V,
10 mA
≤
I
OUT
≤
5A, P
≤
50W
3V
≤
(V
IN
−
V
OUT
)
≤
35V
10 mA
≤
I
OUT
≤
5A
20 ms Pulse
(2)
(2)
LM138
Min
1.19
Typ
1.24
0.005
0.02
0.1
0.3
0.002
45
0.2
1
3.5
5
Max
1.29
0.01
0.04
0.3
0.6
0.01
100
5
Units
V
%/V
%/V
%
%
%/W
μA
μA
%
mA
(1)
(2)
2
These specifications are applicable for power dissipations up to 50W for the TO-3 (NDS) package and 25W for the TO-220 (NDE)
package. Power dissipation is specified at these values up to 15V input-output differential. Above 15V differential, power dissipation will
be limited by internal protection circuitry. All limits (i.e., the numbers in the Min. and Max. columns) are specified to TI's AOQL (Average
Outgoing Quality Level).
Regulation is measured at a constant junction temperature, using pulse testing with a low duty cycle. Changes in output voltage due to
heating effects are covered under the specifications for thermal regulation.
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