SNVS300F – JULY 2004 – REVISED MAY 2011
LM5111 Dual 5A Compound Gate Driver
Check for Samples:
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FEATURES
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Independently Drives Two N-Channel
MOSFETs
Compound CMOS and Bipolar Outputs Reduce
Output Current Variation
5A Sink/3A Source Current Capability
Two Channels can be Connected in Parallel to
Double the Drive Current
Independent Inputs (TTL Compatible)
Fast Propagation Times (25 ns Typical)
Fast Rise and Fall Times (14 ns/12 ns Rise/Fall
with 2 nF Load)
Available in Dual Non-Inverting, Dual Inverting
and Combination Configurations
Supply Rail Under-Voltage Lockout Protection
(UVLO)
LM5111-4 UVLO Configured to Drive PFET
through OUT_A and NFET through OUT_B
Pin Compatible with Industry Standard Gate
Drivers
DESCRIPTION
The LM5111 Dual Gate Driver replaces industry
standard gate drivers with improved peak output
current and efficiency. Each “compound” output driver
stage includes MOS and bipolar transistors operating
in parallel that together sink more than 5A peak from
capacitive
loads.
Combining
the
unique
characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature.
Under-voltage lockout protection is also provided.
The drivers can be operated in parallel with inputs
and outputs connected to double the drive current
capability. This device is available in the SOIC
package or the thermally enhanced VSSOP package.
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TYPICAL APPLICATIONS
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Synchronous Rectifier Gate Drivers
Switch-mode Power Supply Gate Driver
Solenoid and Motor Drivers
PACKAGES
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SOIC
Thermally Enhanced VSSOP
CONNECTION DIAGRAM
NC
1
8
NC
IN_A
2
7
OUT A
VEE
3
6
VCC
IN_B
4
5
OUT_B
Figure 1. 8-Lead SOIC or VSSOP
See D or DGN0008A Package
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PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
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necessarily include testing of all parameters.
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