SNOSC51C – APRIL 1998 – REVISED MARCH 2013
LMC662 CMOS Dual Operational Amplifier
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FEATURES
Rail-to-Rail Output Swing
Specified for 2 kΩ and 600Ω Loads
High Voltage Gain: 126 dB
Low Input Offset Voltage: 3 mV
Low Offset Voltage Drift: 1.3
μV/°C
Ultra Low Input Bias Current: 2 fA
Input Common-Mode Range Includes V
−
Operating Range from +5V to +15V Supply
I
SS
= 400
μA/amplifier;
Independent of V+
Low Distortion: 0.01% at 10 kHz
Slew Rate: 1.1 V/μs
DESCRIPTION
The LMC662 CMOS Dual operational amplifier is
ideal for operation from a single supply. It operates
from +5V to +15V and features rail-to-rail output
swing in addition to an input common-mode range
that includes ground. Performance limitations that
have plagued CMOS amplifiers in the past are not a
problem with this design. Input V
OS
, drift, and
broadband noise as well as voltage gain into realistic
loads (2 kΩ and 600Ω) are all equal to or better than
widely accepted bipolar equivalents.
This chip is built with TI's advanced Double-Poly
Silicon-Gate CMOS process.
See the LMC660 datasheet for a Quad CMOS
operational amplifier with these same features.
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APPLICATIONS
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High-Impedance Buffer or Preamplifier
Precision Current-to-Voltage Converter
Long-Term Integrator
Sample-and-Hold Circuit
Peak Detector
Medical Instrumentation
Industrial Controls
Automotive Sensors
Connection Diagram
Typical Application
Figure 1. 8-Pin PDIP, SOIC
Figure 2. Low-Leakage Sample-and-Hold
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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Copyright © 1998–2013, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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