MOC3020 THRU MOC3023
OPTOCOUPLERS/OPTOISOLATORS
SOES025 – OCTOBER 1986 – REVISED OCTOBER 1995
electrical characteristics at 25°C free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
0.05
1.2
10
MAX
100
1.5
UNIT
µA
I
Static reverse current
V = 3 V
R
R
V
Static forward voltage
I
F
= 10 mA
V
F
I
Repetitive off-state current, either direction
Critical rate of rise of off-state voltage
V
= 400 V,
See Note 5
100
nA
(DRM)
(DRM)
dv/dt
See Figure 1
= 15 mA,
100
0.15
15
V/µs
V/µs
dv/dt(c) Critical rate of rise of commutating voltage
MOC3020
I
O
See Figure 1
30
15
10
5
MOC3021
MOC3022
MOC3023
8
Input trigger current,
either direction
I
Output supply voltage = 3 V
mA
FT
5
3
V
Peak on-state voltage, either direction
Holding current, either direction
I
= 100 mA
1.4
100
3
V
TM
TM
I
H
µA
NOTE 5: Test voltage must be applied at a rate no higher than 12 V/µs.
PARAMETER MEASUREMENT INFORMATION
V
CC
1
6
4
V = 30 V rms
I
R
L
2
10 kΩ
Input
2N3904
(see Note A)
NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input at 0 V. The frequency of V is increased until the
in
phototriac turns on. This frequency is then used to calculate the dv/dt according to the formula:
dv dt
2
2πfV
in
The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-V pulses to the input and increasing
the frequency of V until the phototriac stays on (latches) after the input pulse has ceased. With no further input pulses, the
in
frequency of V is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then be used
in
to calculate the dv/dt(c) according to the formula shown above.
Figure 1. Critical Rate of Rise Test Circuit
7–2
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