SINGLE-SUPPLY MICRO-POWER CMOS OPERATIONAL AMPLIFIER
MicroAmplifier™ SERIES
www.ti.com
SCES658 – JUNE 2006
FEATURES
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Controlled Baseline
– One Assembly/Test Site, One Fabrication
Site
Extended Temperature Performance of
–55°C to 125°C
Enhanced Diminishing Manufacturing
Sources (DMS) Support
Enhanced Product-Change Notification
Qualification Pedigree
(1)
Single-Supply Operation
Rail-to-Rail Output (Within 3 mV)
Micro Power: I
Q
= 23
µA/Amplifier
Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not limited
to, Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this component beyond specified
performance and environmental limits.
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(1)
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Micro-Size Packages
Low Offset Voltage: 500
µV
Typical
Specified From V
S
= 2.3 V to 5.5 V
APPLICATIONS
Battery-Powered Instruments
Portable Devices
High-Impedance Applications
Photodiode Preamplifiers
Precision Integrators
Medical Instruments
Test Equipment
DBV PACKAGE
(TOP VIEW)
Out 1
V– 2
+In 3
4
–In
5
V+
DESCRIPTION/ORDERING INFORMATION
The OPA336 micro-power CMOS operational amplifier (MicroAmplifier™ series) is designed for battery-powered
applications. The device operates on a single supply, with operation as low as 2.1 V. The output is rail to rail and
swings to within 3 mV of the supplies with a 100-kΩ load. The common-mode range extends to the negative
supply — ideal for single-supply applications.
In addition to small size and low quiescent current (23
µA/amplifier),
the OPA336 features low offset voltage
(500
µV
typical), low input bias current (1 pA), and high open-loop gain (115 dB).
The device is packaged in the tiny DBV (SOT23-5) surface-mount package. It operates from –55°C to 125°C. A
macromodel is available for download (at www.ti.com) for design analysis.
ORDERING INFORMATION
T
A
–55°C to 125°C
PACKAGE
DBV – SOT23-5
ORDERABLE PART NUMBER
OPA336MDBVREP
TOP-SIDE MARKING
OAYM
ELECTROSTATIC DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions.
Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to
damage because very small parametric changes could cause the device not to meet its published specifications.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
MicroAmplifier is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006, Texas Instruments Incorporated
TI [ TEXAS INSTRUMENTS ]
